Reliability Improvement of Channel-Passivation-type TFT By The Reduction of Back-Channel Effect

DOI 4 References

Bibliographic Information

Other Title
  • バックチャネル効果削減によるチャネル保護膜型TFTの信頼性向上効果

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Description

TFT back-channel threshold voltage is increased and the TFT leakage is effectively suppressed by the SiOxNy deposition. TEM observation, hole-conduction ignition voltage and back channel conductance analysis reveals that the leakage suppression is due to the charge created at the onset of the SiOxNy deposition. Vgh and Vgl margin improvement after driving stress is also mentioned.

Journal

  • ITE Technical Report

    ITE Technical Report 22.57 (0), 25-28, 1998

    The Institute of Image Information and Television Engineers

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Details 詳細情報について

  • CRID
    1390282679500901376
  • NII Article ID
    110003690160
  • NII Book ID
    AN1059086X
  • DOI
    10.11485/itetr.22.57.0_25
  • ISSN
    24241970
    13426893
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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