An Ultra-low Power Voltage Reference Circuit consisting of Subthreshold MOSFETs
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- UENO Ken
- Graduate School of Information Science and Technology, Hokkaido University
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- HIROSE Tetsuya
- Department of Electrical and Electronics Engineering, Kobe University
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- ASAI Tetsuya
- Graduate School of Information Science and Technology, Hokkaido University
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- AMEMIYA Yoshihito
- Graduate School of Information Science and Technology, Hokkaido University
Bibliographic Information
- Other Title
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- MOSFETのサブスレッショルド特性を利用した超低消費電力CMOS参照電圧源回路(アナログ,アナデジ混載,RF及びセンサインタフェース回路)
- MOSFETのサブスレッショルド特性を利用した超低消費電力CMOS参照電圧源回路
- MOSFET ノ サブスレッショルド トクセイ オ リヨウシタ チョウテイショウヒ デンリョク CMOS サンショウ デンアツゲン カイロ
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Abstract
An ultra-low power CMOS voltage reference circuit has been fabricated in 0.35-μm standard CMOS process. The circuit generates a reference voltage based on threshold voltage of a MOSFET at absolute zero temperature. Theoretical analyses and experimental results showed that the circuit generates a quite stable reference voltage of 745 mV on average. The temperature coefficient and line sensitivity of the circuit were 7 ppm/℃ and 20 ppm/V, respectively. The power supply rejection ratio (PSRR) was -45 dB at 100 Hz. The circuit consists of subthreshold MOSFETs with a low-power dissipation of 0.3μW or less, and a 1.5-V power supply. Because the circuit generates a reference voltage based on threshold voltage of a MOSFET in an LSI chip, it can be used as an on-chip process monitoring circuit and a part of the on-chip process compensation circuit systems.
Journal
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- ITE Technical Report
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ITE Technical Report 32.45 (0), 55-60, 2008
The Institute of Image Information and Television Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390282679502303360
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- NII Article ID
- 110007384715
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- NII Book ID
- AN1059086X
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- ISSN
- 24241970
- 13426893
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- NDL BIB ID
- 9709742
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed