The performance evaluation of fully depleted SOI pixel detector with backgate surface potential pinning

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Other Title
  • バックゲート表面電位固定構造を用いた完全空乏化SOIピクセル検出器の性能評価(イメージセンサおよび一般,2015 IISWとVLSIシンポジウムからの発表報告)
  • バックゲート表面電位固定構造を用いた完全空乏化SOIピクセル検出器の性能評価
  • バックゲート ヒョウメン デンイ コテイ コウゾウ オ モチイタ カンゼン クウボウカ SOI ピクセル ケンシュツキ ノ セイノウ ヒョウカ

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Abstract

A novel SOI (Silicon-On-Insulator) pixel photo detector with full depletion and backgate surface potential pinning is proposed in this presentation. The detector greatly increases charge-to-voltage conversion gain while stabilizing the operation of SOI circuits. Low noise and wide dynamic range operations are attained. A double doping technique increasing potential barrier to holes at the surface region is effective for a stable operation to the variation of back bias voltage. The structure of the pixel detector, simulation results of potential distributions and measurement results are reported.

Journal

  • ITE Technical Report

    ITE Technical Report 39.35 (0), 37-40, 2015

    The Institute of Image Information and Television Engineers

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