Cu Bump Interconnections in 20.MU.m-Pitch at Low Temperature Utilizing Electroless Tin-Plating on 3D Stacked LSI.

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  • Tomita Yoshihiro
    Association of Super-Advanced Electronics Technologies (ASET), Electronic System Integration Technology Research Department, Tsukuba Research Center, Tsukuba Center Inc.
  • Morifuji Tadahiro
    Association of Super-Advanced Electronics Technologies (ASET), Electronic System Integration Technology Research Department, Tsukuba Research Center, Tsukuba Center Inc.
  • Tomisaka Manabu
    Association of Super-Advanced Electronics Technologies (ASET), Electronic System Integration Technology Research Department, Tsukuba Research Center, Tsukuba Center Inc.
  • Sunohara Masahiro
    Association of Super-Advanced Electronics Technologies (ASET), Electronic System Integration Technology Research Department, Tsukuba Research Center, Tsukuba Center Inc.
  • Nemoto Yoshihiko
    Association of Super-Advanced Electronics Technologies (ASET), Electronic System Integration Technology Research Department, Tsukuba Research Center, Tsukuba Center Inc.
  • Sato Tomotoshi
    Association of Super-Advanced Electronics Technologies (ASET), Electronic System Integration Technology Research Department, Tsukuba Research Center, Tsukuba Center Inc.
  • Takahashi Kenji
    Association of Super-Advanced Electronics Technologies (ASET), Electronic System Integration Technology Research Department, Tsukuba Research Center, Tsukuba Center Inc.
  • Bonkohara Manabu
    Association of Super-Advanced Electronics Technologies (ASET), Electronic System Integration Technology Research Department, Tsukuba Research Center, Tsukuba Center Inc.

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Other Title
  • Cu Bump Interconnections in 20 μm-Pitch at Low Temperature Utilizing Electroless Tin-Plating on 3D Stacked LSI
  • Cu Bump Interconnections in 20 ミュー m Pitch at Low Temperature Utilizing Electroless Tin Plating on 3D Stacked LSI

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Abstract

The electroless tin-plating on copper has the preferable characteristics for the thermal compression bonding, although it is easy to decrease in thickness by heating at the bonding because of the diffusion with copper.<BR>Therefore, the bonding profile was determined to have lower pre-heating to evaluate the bondability with copper-bumps dressed thin tin-caps in 20 μm-pitch. Then, the possibility of the interconnections in 20 μm-pitch was confirmed. Bonding temperature was 150°C and bonding force was 24.5 N.<BR>Finally, the tin-cap on a through-hole electrode (T-COTE) was performed in the electroless plating and the basic bonding condition was evaluated on the vertical interconnections.<BR>The results showed the sufficient joint between the copper electrodes through the Si die and the adjacent copper bumps on the interposer.

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