Probing of Carrier Injection into Organic Field Effect Transistor by Optical Second Harmonic Generation

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  • Lim Eunju
    Department of Physical Electronics, Tokyo Institute of Technology
  • Manaka Takaaki
    Department of Physical Electronics, Tokyo Institute of Technology
  • Iwamoto Mitsumasa
    Department of Physical Electronics, Tokyo Institute of Technology

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Abstract

To probe the carrier injection from Au source electrode into the channel of pentacene field effect transistors (FET), optical second harmonic generation (SHG) measurement is employed. SHG is enhanced at the off state due to Laplace electric field formation, whereas it is diminished at the on state. As the generation of SHG signal is in proportional to the electric field formed in the channel, we concluded that SHG measurement can probe the change of the electric field in the pentacene FET channel due to the injected and subsequently trapped holes.

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