Probing of Carrier Injection into Organic Field Effect Transistor by Optical Second Harmonic Generation
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- Lim Eunju
- Department of Physical Electronics, Tokyo Institute of Technology
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- Manaka Takaaki
- Department of Physical Electronics, Tokyo Institute of Technology
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- Iwamoto Mitsumasa
- Department of Physical Electronics, Tokyo Institute of Technology
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To probe the carrier injection from Au source electrode into the channel of pentacene field effect transistors (FET), optical second harmonic generation (SHG) measurement is employed. SHG is enhanced at the off state due to Laplace electric field formation, whereas it is diminished at the on state. As the generation of SHG signal is in proportional to the electric field formed in the channel, we concluded that SHG measurement can probe the change of the electric field in the pentacene FET channel due to the injected and subsequently trapped holes.
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 127 (5), 261-264, 2007
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679569719424
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- NII論文ID
- 10019932374
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 8808255
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
- KAKEN
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- 使用不可