2次元PIC-MCCシミュレーションによるCF4プラズマモデリング

DOI Web Site Web Site 参考文献26件 オープンアクセス

書誌事項

タイトル別名
  • Practical 2-dimensional PIG-MCC model for CF<sub>4</sub> plasma discharge
  • 2ジゲン PIC MCC シミュレーション ニ ヨル CF4 プラズマ モデリング

この論文をさがす

説明

We investigated the ion densities generated in CF4 plasma, and developed a practical reaction model of CF4 using PIC-MCC (Particle-in-Cell Monte Carlo Collision). A Langmuir probe and the quadrupole mass-spectra analyzer HAL EQP300 were connected to a 6-inch-size capacitively coupled plasma reactor for measuring the plasma parameter and the ion densities.<br>We measured the ion densities in CF4 plasma under the following conditions: RF power range from 50 to 150W, CF4 gas flow rate 50 seem, and pressure range from 6.7 to 20Pa. In CF4 plasma, CF3+, CF2+, CF+ were generated in the ratio of 1.0: 0.06: 0.04, which indicates CF3+ is dominant. In our CF4 plasma model, the generations of CF3+ and CF3 are considered mainly. We also justified our model by calculating the rate equation on CF4 plasma.<br>The experimental results and simulation results show good agreements in the electron density, electron temperature, and plasma potential. In CF4 plasma, as RF power increases, the densities of CF3+ and CF3 become larger. Simulation results indicate this dependency on RF power. Furthermore, we measured SiO2 etching rates at wafer center and wafer edge to estimate the ion spatial distribution. The distribution of etching rate is similar to CF3+ ion flux distribution calculated from PIC-MCC simulation.<br>Plasma parameter, the dependency on FR power and pressure, and ion distribution are predicated in our practical plasma model of CF4

収録刊行物

参考文献 (26)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ