書誌事項
- タイトル別名
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- Based on Free Electron Scheme under High-Frequency Current
- 2セッショクセン ノ コウシュウハ ツウデン ニ オケル キンセツ テイコウ
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抄録
Proximity resistance to high-frequency current conducted with same direction in contact has been analyzed, taking Lorentz and Coulomb forces into considerations.<br>As a result, displacement of conducting carriers caused by the proximity effect, forms the new current distribution with three components, that is, skin effect, Lorentz force and Coulomb force components without the boundaries of carriers.<br>Based on this consideration, the ratio of ac resistance to the dc one has been calculated, using Cassinian ovals. The calculated resistance was in agreement with experimental value within 10%.
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 118 (2), 123-128, 1998
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679575059456
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- NII論文ID
- 130006838292
- 10002823557
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 4391689
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- データソース種別
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- JaLC
- IRDB
- NDL
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- 抄録ライセンスフラグ
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