Temperature Rise in a Birefringent Substrate by RF Discharge Plasma

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  • RF放電プラズマによる基板の温度上昇
  • RF ホウデン プラズマ ニヨル キバン ノ オンド ジョウショウ

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Temperature rises of a birefringent substrate (LiNbO3) have been measured in an argon RF discharge plasma. The measurement method is based on monitoring the variation of natural birefringence with temperature by laser interferometry. Using this method, the dependence of substrate temperature rise on applied RF power and gas pressure has been investigated. The evaluation of the temperature curves shows that heat flux from the plasma towards the substrate is independent of time and temperature. The magnitude of the flux differs largely from the applied power, and approximately 0.4‰ of the power. By measuring electron density, electron temperature and plasma potential with Langmuir probe, the energy of the ions incident on the substrate is estimated. The ion flux towards the substrate is calculated from the energy of ions and is compared with the measured heat flux. The dependence on the applied power is in approximate agreement between those fluxes. The temperature distribution over the substrate thickness is simulated numerically using the finite difference method.

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