Detection of Defects in EUVL Mask using Coherent EUV Source
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- Nagata Yutaka
- RIKEN ASI University of Hyogo LASTI JST CREST
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- Harada Tetsuo
- University of Hyogo LASTI JST CREST
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- Watanabe Takeo
- University of Hyogo LASTI JST CREST
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- Midorikawa Katsumi
- RIKEN ASI
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- Kinoshita Hiroo
- RIKEN ASI University of Hyogo LASTI JST CREST
Bibliographic Information
- Other Title
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- コヒーレントEUV光源を用いたEUVLマスクの欠陥検出
- コヒーレント EUV コウゲン オ モチイタ EUVL マスク ノ ケッカン ケンシュツ
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Abstract
The detection and evaluation of printable defects in extreme ultraviolet lithography (EUV) masks are one of the most critical issues for high-volume manufacturing of next generation semiconductor. The coherent EUV scatterometry microscope is a strong candidate for high-precision inspection of defects. We have developed the high-order harmonics generation system to generate coherent EUV light using the commercial table-top laser system. The low beam divergence was measured to be 0.18mrad for 13.5nm (59th) high-order harmonics. The spatially coherent, 59th harmonics was improved the contrast ratio of diffraction images. Defect signals were observed from the 2-nm width line-defect in the 88-nm line-and-space (L/S) pattern and the 54-nm defect in the 360nm pitch pattern using coherent scatterometry microscope equipped with high-order harmonics generation system as a practical coherent EUV light source.
Journal
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- IEEJ Transactions on Fundamentals and Materials
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IEEJ Transactions on Fundamentals and Materials 133 (10), 509-518, 2013
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390282679576979200
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- NII Article ID
- 10031200957
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- NII Book ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL BIB ID
- 024946393
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed