書誌事項
- タイトル別名
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- Transparent Conducting ZnO Thin Films Prepared at Room Temperature by PLD Method
- パルスレーザ タイセキホウ ニ ヨリ テイオン キバン ニ サクセイ シタ サンカ アエンケイ トウメイ ドウデン マク
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説明
Al-doped zinc oxide (AZO) or Ga-doped zinc oxide (GZO) films with c-axis orientation have been deposited on glass substrates by pulsed laser deposition (PLD) using an ArF excimer laser (λ= 193 nm) or Nd:YAG laser (λ= 532, 355, 266 nm). The film deposition took place at substrate temperatures of room temperature (25 °C) ∼ 200 °C. For the GZO film deposited by irradiating a pulsed laser beam of energy density of 1 J/cm2 at repetition frequency of 10 Hz, we obtained the 416 nm-thick GZO film with the lowest resistivity of 2. 89×10-4 Ω·cm for the case at a substrate temperature of room temperature. An average transmittance of more than 80 % in the visible region was obtained for the GZO films fabricated, providing useful functionality as TCO films in the visible region. Moreover, we studied whether the film properties were subject to influences of the position of the plume (in the central axis or at the periphery) generated between the substrate and the target.
収録刊行物
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- 電気学会論文誌Ｃ（電子・情報・システム部門誌）
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電気学会論文誌Ｃ（電子・情報・システム部門誌） 126 (11), 1268-1275, 2006
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679580714496
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- NII論文ID
- 10018318166
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- NII書誌ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL書誌ID
- 8560200
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
