Low Temperature Growth of Sol-Gel SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films by Low Pressure Annealing
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- Ushikubo Maho
- Sharp Corp.
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- Yokoyama Seiich
- Sharp Corp.
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- Ito Yasuyuki
- Sharp Corp.
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- Matsunaga Hironori
- Sharp Corp.
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- Atuki Tsutomu
- Mitsubisi Material Corp
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- Yonezawa Tadashi
- Mitsubisi Material Corp
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- Ogi Katsumi
- Mitsubisi Material Corp
Bibliographic Information
- Other Title
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- 減圧アニール法によるゾルゲルSrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>薄膜の低温形成
- 減圧アニール法によるゾルゲルSrBi2Ta2O9薄膜の低温形成
- ゲンアツ アニールホウ ニヨル ゾルゲル SrBi2Ta2O9 ハクマク ノ
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Abstract
A new low temperature processing method to prepare SrBi2Ta2O9 thin films is proposed. These thin films were prepared on Pt/Ta/SiO2/Si substrates by a sol-gel method, and their structural and electrical properties were investigated. Films were annealed before and after the top Pt electrode deposition, respectively. The 1st annealing was performed in a 760Torr-oxygen ambient at 600°C for 30min., the 2nd annealing was performed in a 5Torr-oxygen ambient at 600°C for 30min.. The films were well crystallized and fine-grained after the 2nd annealing. The electrical characteristics of the 200-nm-thich film obtained by this new process, i.e., remanent polarization (Pr), coercive field (Ec), and the leakage current density (IL), were as follows; Pr=8.5μC/cm2, Ec=36kV/cm, IL =1×10-7A/cm2 (at 150kV/cm). This process is very attractive for highly integrated ferroelectric nonvolatile memory applications.
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 117 (3), 227-232, 1997
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390282679584491648
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- NII Article ID
- 130006843664
- 10002809561
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 4149759
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed