Impact of Device Degradation Due to NBTI on Gated Clock Systems
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- Kurokawa Atsushi
- Hirosaki University
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- Hoshi Makoto
- Hirosaki University
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- Watanabe Masayuki
- Hirosaki University
Bibliographic Information
- Other Title
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- ゲーテドクロックシステムへのNBTI起因デバイス劣化のインパクト
- ゲーテドクロック システム エ ノ NBTI キイン デバイス レッカ ノ インパクト
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Abstract
On the system with gated clock, NBTI causes the unbalanced degradation in the threshold voltage of PMOSFETs. In this paper, we clarify the impact of NBTI degradation on timing characteristics such as setup time, hold time and clock skew. We demonstrate that the maximum operating frequency regarding setup time violation becomes worse, hold time constraint becomes better, and clock skew after a gated clock cell operates better with stopped time.
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 134 (3), 355-361, 2014
The Institute of Electrical Engineers of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679585283584
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- NII Article ID
- 130003391729
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 025346817
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed