Formation of Deep pn Junctions by High-Energy Al and B Ion Implantations into SiC
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- Kimoto Tsunenobu
- Kyoto University
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- Miyamoto Nao
- Kyoto University
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- Matsunami Hiroyuki
- Kyoto University
Bibliographic Information
- Other Title
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- SiCへの高エネルギーAl、Bイオン注入による深い接合の形成
- SiC エ ノ コウエネルギー Al Bイオン チュウニュウ ニ ヨル フカイ セツゴウ ノ ケイセイ
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Abstract
High-energy (MeV) implantation of Al+ and B+ into SiC epilayers has been investigated. A 3μm-deep pn junction is formed by room-temperature multiple Al+ or B+ implantation with implantation energies up to 6.2MeV or 3.4MeV, respectively. Rutherford backscattering channeling measurements have revealed that implantation-induced damages can be reduced close to a virgin level by high-temperature annealing at 1700_??_1800°. High electrical activation ratios over 90% have been achieved for both Al+- and B+-implanted layers by annealing at 1800°. Mesa pn diodes with a 15μm-thick n-layers formed by MeV implantation have exhibited high breakdown voltages of 2860_??_3080V. The reverse characteristics of the diodes have been substantially improved by increasing annealing temperature up to 1800°. The diode performance is discussed with the results of deep level analyses near the junctions.
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 122 (1), 17-22, 2002
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390282679587819904
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- NII Article ID
- 130006845854
- 10007655321
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 6025768
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed