Laser Produced Plasma for EUV Light Source For Lithography
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- NISHIHARA Katsunobu
- Institute of Laser Engineering, Osaka University
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- NISHIMURA Hiroaki
- Institute of Laser Engineering, Osaka University
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- MOCHIZUKI Takayasu
- Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo
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- SASAKI Akira
- Advanced Photon Research Center, Kansai Research Establishment, Japan Atomic Energy Research Institute
Bibliographic Information
- Other Title
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- レーザー生成プラズマを用いた次世代リソグラフィＥＵＶ光源
- レーザー セイセイ プラズマ オ モチイタ ジ セダイ リソグラフィ EUV コウゲン
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Abstract
We describe properties of laser produced plasmas (LPP) for extreme ultra violet (EUV) light source for next generation lithography as an industrial application of LPP. We briefly present three topics related to the LPPEUV light source; laser intensity dependence of conversion efficiency from laser light to EUV light with 13.5nm wavelength with 2% bound width with tin target, present understanding of EUV emission from xenon target, and atomic processes in those targets.
Journal
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- The Review of Laser Engineering
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The Review of Laser Engineering 32 (5), 330-336, 2004
The Laser Society of Japan
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Details 詳細情報について
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- CRID
- 1390282679622205568
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- NII Article ID
- 10012932295
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- NII Book ID
- AN00255326
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- COI
- 1:CAS:528:DC%2BD2cXlsFGjs78%3D
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- ISSN
- 13496603
- 03870200
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- NDL BIB ID
- 6953165
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed