Poly-Silicon TFT Annealing with XeCl Excimer Laser.

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  • ＸｅＣｌエキシマレーザーによるポリシリコンＴＦＴアニーリング
  • XeCl エキシマレーザー ニ ヨル ポリシリコン TFT アニーリング

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Abstract

Liquid-crystal displays (LCDs) with thin film transistors (TFTs) are common in digital and video cameras. An Excimer-Laser Annealing (ELA) method is now commonly integrated into a low-temperature poly-silicon (p-Si) TFT process. Since the ELA process can be performed below 400°C, it is possible to use a low-cost standard glass instead of a quartz glass as a TFT substrate. Our ELA system with a XeCl excimer laser has a line beam optic system, handling the beam length of up to 275mm. The line beam scans an amorphous-silicon (a-Si) thin film on the substrate. As a result, the a-Si film changes into the p-Si film immediately. We demonstrated crystallization of a-Si thin films on different annealing conditions such as various laser energy levels and various substrate temperatures. It was found that the crystal-grain size of the p-Si film strongly depends on both the energy density and the substrate temperature.

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