ノーマリオフ型５ｋＶ級４Ｈ‐ＳｉＣ　ＪＦＥＴ“ＳＥＪＦＥＴ”の電気的特性

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タイトル別名
  • Electric characteristics of normally-off type 5 kV class 4H-SiC JFET, "SEJEET"
  • ノーマリオフ型5kV級4H-SiC JFET "SEJFET"の電気的特性
  • ノーマリオフガタ 5kVキュウ 4H SiC JFET SEJFET ノ デンキテキ トクセイ

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説明

A normally-off type 5.3kV 4H-SiC JFET with low specific on-resistance, called SEJFET (Static Expansion channel JFET), has been fabricated. Its normally-off operation was realized by a thin regrown epitaxial channel layer and using the buried p+ regions as a gate in addition to the top p+ regions. The achieved blocking voltage is the highest class BV among the reported SiC JFET. In a 5.3kV 4H-SiC SEJFET, the lowest specific on resistance of 69mΩcm2. Furthermore, the highest current capability among SiC JFET of 3.3A is achieved. In all reported FETs, the SEJFET has the best trade-off between RonS and blocking voltage (BV), which is about 1/230th lower than theoretical limit of a Si FET. Furthermore, the figure of merit (BV2/RonS) is 407MW/cm2, and this value is the highest among reported normally off SiC FETs.

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