Variation in the Preferred Orientations of TiN Thin Films Prepared by Ion-Beam-Assisted Deposition.

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  • イオンビーム支援蒸着法によるＴｉＮ薄膜の配向制御
  • イオンビーム シエン ジョウチャクホウ ニ ヨル TiN ハクマク ノ ハイコウ セイギョ

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Abstract

Variation in the preferred orientations of Titanium Nitride (TiN) thin films with various experimental conditions (N/Ti transport ratios, N ion incident angles, film thickness and substrate temperature) were investigated. These films were formed on Silicon (100) wafers by ion-beam-assisted deposition with the nitrogen ion energies of I keV. The preferred orientation of TiN films changed from (111) to (200) as the N/Ti transport ratios and the ion incident angles increased. It is considered that this phenomenon is caused by the selective damage of crystal growth due to the energy of bombarding particles. On the other hand, the increase of film thickness led the preferred orientation of the TiN (200) film to (200) plus (220) orientation. Furthermore, this orientation changed to (200) again with the heating of the substrate during film preparation. It is considered that these phenomena are caused by the minimization process of the overall energy. So, the heating of the substrate is useful for synthesize of thick TiN (200) films.

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