Fundamental Study on CMP Process Controlled with Optical Radiation Pressure.

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  • 光放射圧制御微粒子集積現象に基づくＣＭＰ加工に関する基礎的研究
  • ヒカリ ホウシャアツ セイギョ ビリュウシ シュウセキ ゲンショウ ニ モトヅク CMP カコウ ニ カンスル キソテキ ケンキュウ

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Higher integration of VLSI has produced the number of interconnection layers. This trend requires a high planarity to individual surfaces of interconnection layers because their irregularities must be less than the DOF (Depth of Focus) of the wafer stepper's projection lens. This suggests that the technology for achieving the global planarity within a die is required. At the planarization process, the essential factor for the global planarization is to remove materials at the top of humps of surface irregularities selectively. From the point of view, the new planarization method which utilizes the laser trapping phenomena and which has the process of intentional selective material removal at the top of humps is attempted.<BR>On the study, at first, the laser trapping of fine particles in slurry and the formation of aggregated marks of fine particles were investigated. Secondly, material removal process by polishing after aggregated marks formed was observed. Finally, as a planarization method for irregular surface of Silicon wafer, LAFP(Laser Aggregation, Filling-up and Polishing) method was attempted. The method has two steps procedure for planarization. First step is forming aggregated marks of fine particles with laser irradiation at the specific location of recessed part of trenches on Silicon wafer surface, and the second step is polishing the Silicon wafer surface together with filled up trenched area as one continuous surface with no irregularities of wafer patterns. As an experiment, the LAFP method was applied to the silicon wafer surface which has four trenches as dummy patterns formed with FIB process, and smooth and planarized surface was obtained after polishing.

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