Electrostatic Potential Fluctuations on Oxide-Passivated Si(111) Surfaces Measured Using Integrated Scanning Probe Microscopy

DOI Web Site 被引用文献3件 参考文献22件 オープンアクセス
  • Bolotov Leonid
    Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Japan
  • Tada Tetsuya
    Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Japan
  • Iitake Masanori
    Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Japan
  • Nishizawa Masayasu
    Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Japan
  • Kanayama Toshihiko
    Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Japan

説明

Variations of the electrostatic potential were investigated for oxide-passivated n-Si(111) surfaces with atomically flat terraces by measuring the force acting on an ultra-sharp tungsten probe that was attached to the quartz resonator of an atomic force microscope. When the probe-sample gap maintained a constant tunneling current, an enhancement of electrostatic force with a lateral extent of ∼5 nm was observed around underlying donor atoms and charged defects. Additional variations of the surface potential and the probe-sample capacitance across the surface steps were associated with excess electric charge at the step edge. [DOI: 10.1380/ejssnt.2011.117]

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