書誌事項
- タイトル別名
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- Stress Measurement of Single Crystal Using X-ray Diffraction Technique
- Xセン カイセツホウ ニ ヨル タンケッショウ オウリョク ソクテイ
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説明
It is very important to know the residual stress states in a single crystal since the residual stresses affects the mechanical properties or functionality of some devices such as semiconductors or micromachines. X-ray diffraction technique is non destructive and detached method to know the residual stresses of crystalline materials in various atmospheres. Using a position sensitive proportional counter (PSPC) as an X-ray detector, it is very easy to obtain the reasonable diffraction profile of single crystal. In the case of using PSPC, crystal oscillation is required to obtain a perfect diffraction profile. In this paper, we explained the stress measurement technique for single crystal by using PSPC and the principle for stress measurement of single crystal with unknown stress-free lattice parameter.
収録刊行物
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- 実験力学
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実験力学 4 (2), 93-99, 2004
日本実験力学会
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詳細情報 詳細情報について
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- CRID
- 1390282680165368832
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- NII論文ID
- 10013274269
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- NII書誌ID
- AA11822914
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- ISSN
- 18844219
- 13464930
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- NDL書誌ID
- 7026747
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
