A simple empirical model for calculating gain and excess noise in GaAs/Al.XI.Ga1-.XI.As APDs (0.3.LEQ..XI..LEQ.0.6)

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  • Soroosh Mohammad
    Advanced Device Simulation Lab (ADSL), Electrical and Computer Engineering Department, Tarbiat Modares University
  • Moravvej-Farshi Mohammad Kazem
    Advanced Device Simulation Lab (ADSL), Electrical and Computer Engineering Department, Tarbiat Modares University
  • Saghafi Kamyar
    Electrical Engineering Department, Shahed University

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In this paper, we present a simple empirical model for calculating gain and excess noise in heterojunction GaAs/AlξGa1-ξAs APDs (0.3≤ξ≤0.6), without going through the relatively complicated and time consuming Monte Carlo simulation, commonly used for such devices. In this model, we present a set of empirical formula which can predict a distribution function for ionization path length for a given electric field throughout multiplication region. To determine the optimized values of the adjustable parameters used in our empirical model, we train a back-propagation neural network. The results are in excellent agreement with those obtained by the random path length (RPL) technique.

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