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2-µm wavelength tunable distributed Bragg reflector laser
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- Kanai Takuya
- NTT Device Technology Laboratories, NTT Corporation
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- Fujiwara Naoki
- NTT Device Technology Laboratories, NTT Corporation
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- Ohiso Yoshitaka
- NTT Device Technology Laboratories, NTT Corporation
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- Ishii Hiroyuki
- NTT Device Technology Laboratories, NTT Corporation
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- Shimokozono Makoto
- NTT Device Technology Laboratories, NTT Corporation
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- Itoh Mikitaka
- NTT Device Technology Laboratories, NTT Corporation
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Description
<p>We demonstrate a tunable distributed Bragg reflector (DBR) laser diode operating in the 2-µm region. A strained InGaAs multi-quantum well is used for the active region, and InGaAs is used for the passive region in the 2-µm DBR laser. The fabricated DBR laser emits a single-mode continuous wave at 2.02 µm, and the output power exceeds 6 mW at room temperature. A wavelength tuning range of about 10 nm is achieved by controlling of injection currents to the DBR regions.</p>
Journal
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- IEICE Electronics Express
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IEICE Electronics Express 13 (16), 20160655-20160655, 2016
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390282680197109120
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- NII Article ID
- 130005406912
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- ISSN
- 13492543
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
- OpenAIRE
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- Abstract License Flag
- Disallowed