Refinement of .BETA.-Si3N4 Single Crystal Grown from Silicon Melt.
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- YAMAMOTO Yoshinobu
- National Institute for Research in Inorganic Materials
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- HIROSAKI Naoto
- National Institute for Research in Inorganic Materials
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- ISHIKAWA Ichiro
- Research Department, Nissan ARC, Ltd.
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- YE Jiping
- Research Department, Nissan ARC, Ltd.
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- MATSUO Kazuo
- Materials Research Laboratory, Nissan Motor Co., Ltd.
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- FURUYA Kenji
- Materials Research Laboratory, Nissan Motor Co., Ltd.
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- MUNAKATA Fumio
- Materials Research Laboratory, Nissan Motor Co., Ltd.
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- AKIMUNE Yoshio
- National Institute for Advanced Interdisciplinary Research
Bibliographic Information
- Other Title
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- 溶融ケイ素から育成したβ‐Ｓｉ３Ｎ４単結晶の精製
- ヨウユウ ケイソ カラ イクセイ シタ ベータ Si3N4タンケッショウ ノ セイセイ
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Abstract
Silicon powder in a reaction-sintered silicon nitride crucible was heated at 1600°C in a nitrogen atomosphere. Clustered β-Si3N4 single crystals were obtained in residual silicon metal after cooling. The silicon residuals were dissolved by chemical purification using a mixture of aqueous HF and HNO3, and subsequently treated and with H2SO4. Scanning electron microscopy observation showed that large β-Si3N4 crystals without Si residuals could be successfully separated by this process.
Journal
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 108 (1257), 515-517, 2000
The Ceramic Society of Japan
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Details 詳細情報について
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- CRID
- 1390282680225483776
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- NII Article ID
- 110002289842
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- NII Book ID
- AN10040326
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- ISSN
- 18821022
- 09145400
- http://id.crossref.org/issn/09145400
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- NDL BIB ID
- 5378636
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed
