Boundary Structures of SiC Bicrystal

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  • SiC双結晶の境界構造
  • SiC ソウ ケッショウ ノ キョウカイ コウゾウ

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Abstract

We proposed an atomic configurational model on an asymmetric boundary between 3C (111) and 6H (1012) faces of SiC single crystals. In this model, the boundary energy was estimated with the numbers of dangling bonds at the boundary with different energies on carbon or silicon atom. The results were extended to the boundary between SiC 6H (0001) and 6H (1012) faces for comparing with the experimental results of high-resolution electron microscopy. It is concluded that the geometrical model is useful for studying the boundary between c-face and others of SiC crystals.

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