CVD法によるβ-SiC及びSiC/TiCコンポジットの成長

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  • The Growth of Multi-Star CVD β-SiC and SiC/TiC Composites
  • Growth of Multi Star CVD ベータ SiC and Si

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The multi-star β-SiC and SiC/TiC composites have been deposited by CVD method on graphite substrate. The precursors, SiCl4, TiCl4 and C3H8 were used as silicon, titanium and carbon sources, respectively, and hydrogen as a carrier gas for deposition. The morphology of surface and polished cross section for the SiC and SiC/TiC composite deposited was observed by SEM. The crystal orientations and microstructrure were analyzed by XRD and TEM. The growth propagation of the multi-star β-SiC and the SiC/TiC composites is attributed to the twin-plane-reentrant-edge mechanism. The [220] is an intensely preferred orientation as the twin axis of interpenetration twin configuration. The interface of SiC/TiC is severely strained as found in TEM image and dislocations are generated in the TiC phases owing to the mismatch of coefficient of thermal expansion.

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