Preparation of Highly Oriented Bismuth Titanate Thin Films by Sol-Gel Process

DOI Web Site Web Site 1 Citations 15 References Open Access
  • KATO Eiji
    Faculty of Industrial Science and Technology, Science University of Tokyo
  • WATANABE Yuichi
    Faculty of Industrial Science and Technology, Science University of Tokyo
  • TSUKAMOTO Takeyo
    Faculty of Science, Science University of Tokyo
  • TSUCHIYA Toshio
    Faculty of Industrial Science and Technology, Science University of Tokyo

Bibliographic Information

Other Title
  • ゾル・ゲル法による高配向したチタン酸ビスマス薄膜の作製
  • Preparation of Highly Oriented Bismuth

Search this article

Description

In the present study, an attempt is made to prepare a highly c-axis oriented thin film with the composition of Bi4Ti3O12 (BIT). Bismuth nitrate and titanium tetrabutoxide were used as raw materials. Acetylacetone and ethylene glycol were used as the solvents. The thin film was a single phase of BIT completely oriented along the c-axis on Pt substrate with good ferroelectric properties at room temperature: coercive field of 25kV/cm, remanent polarization of 2.5μC/cm2, dielectric constant of 130. The key technique to highly c-axis oriented thin films was heat treatment of sol prepared by optimum combination of raw materials and solvents.

Journal

Citations (1)*help

See more

References(15)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top