マグネトロンスパッタリング法によるホウ素含有薄膜の創成とその機械的特性の評価

DOI Web Site 被引用文献1件 参考文献19件

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タイトル別名
  • Preparation of Boron Containing Thin Films by Magnetron Sputtering Method and Evaluation of Their Mechanical Properties
  • マグネトロンスパッタリングホウ ニ ヨル ホウソ ガンユウ ハクマク ノ ソウセイ ト ソノ キカイテキ トクセイ ノ ヒョウカ ハンノウ ガス テンカ ノ エイキョウ
  • - Influences of Reactive Gas Addition -
  • ― 反応ガス添加の影響 ―

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抄録

Thin films containing boron have been prepared on silicon substrates by DC magnetron sputtering using a sintered boron carbide (B4C) target. The influences of N2 or H2 addition as a reactive gas on chemical bonding states, nano-indentation hardness, adhesive strength to the substrate and the friction coefficient of the films are investigated. Nano-indentation studies show that N2 addition in the film formation process leads to a lower hardness of the film. Absorption spectra in Fourier-transform infrared spectroscopy exhibit peaks corresponding to hexagonal boron nitride, and C 1s peaks and N 1s peak in X-ray photoelectron spectroscopy spectra indicate that nitrogen dose not bond to carbon. The lack of a three-dimensional boron-carbon-nitrogen network in the films is thought to be a reason for the deterioration in the nano-indentation hardness of the films. On the other hand, the adhesive strength is increased significantly by N2 or H2 addition in the film formation process, although the frictional properties of the film against a steel ball in an ambient atmosphere are not improved in this study.

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