Characterization of SiC:H films deposited using HMDS precursor with C2H2 dilution gas by remote PECVD system

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Abstract

Amorphous SiC:H films were deposited on (100) silicon wafer by remote-Plasma Enhanced Chemical Vapor Deposition system in the temperature range of 400°C-450°C. Hexamethyldisilane (HMDS) and C2H2 gas were used as a precursor and a dilution gas, respectively. The lower deposition temperature and lower sp3/sp2 carbon bonding ratio made lower dielectric constant.

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