A Study of the Graphene Formation on Silicon Carbide-on-Insulator Substrates
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- EDAMOTO Daiki
- Faculty of Engineering, Kyushu Institute of Technology
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- HAYAHISA Kazuki
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
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- OKANO Motochika
- Faculty of Engineering, Kyushu Institute of Technology
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- TSUBOI Naoya
- Faculty of Engineering, Kyushu Institute of Technology
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- IKARI Tomonori
- Ube National College of Technology
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- NAKAO Motoi
- Faculty of Engineering, Kyushu Institute of Technology
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- NAITOH Masamichi
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
Bibliographic Information
- Other Title
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- SOI 基板を用いたグラフェン形成に関する研究
- SOI キバン オ モチイタ グラフェン ケイセイ ニ カンスル ケンキュウ
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Abstract
We investigated the effect of ion-beam irradiation on the growth of graphene at the 3C-SiC(111)/SiO2/Si(111) substrate by the surface decomposition method. When Ar+ ions with 1 keV were irradiated to the sample surface for 1 h and then annealed at 1200℃ for 1 min, graphene layers were formed. The graphene surfaces were evaluated by scanning tunneling microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. We found that the growth of graphene at the surface decomposition method is promoted by ion-beam irradiation. This result indicated that ion-beam irradiation caused breakage of Si-C bonds and induced desorption of Si atoms from the surface.<br>
Journal
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- Journal of the Vacuum Society of Japan
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Journal of the Vacuum Society of Japan 57 (4), 144-146, 2014
The Vacuum Society of Japan
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Details
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- CRID
- 1390282680270350976
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- NII Article ID
- 130004952515
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- NII Book ID
- AA12298652
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- ISSN
- 18824749
- 18822398
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- NDL BIB ID
- 025460158
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed