書誌事項
- タイトル別名
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- A Study of the Graphene Formation on Silicon Carbide-on-Insulator Substrates
- SOI キバン オ モチイタ グラフェン ケイセイ ニ カンスル ケンキュウ
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説明
We investigated the effect of ion-beam irradiation on the growth of graphene at the 3C-SiC(111)/SiO2/Si(111) substrate by the surface decomposition method. When Ar+ ions with 1 keV were irradiated to the sample surface for 1 h and then annealed at 1200℃ for 1 min, graphene layers were formed. The graphene surfaces were evaluated by scanning tunneling microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. We found that the growth of graphene at the surface decomposition method is promoted by ion-beam irradiation. This result indicated that ion-beam irradiation caused breakage of Si-C bonds and induced desorption of Si atoms from the surface.<br>
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 57 (4), 144-146, 2014
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282680270350976
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- NII論文ID
- 130004952515
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- NII書誌ID
- AA12298652
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- ISSN
- 18824749
- 18822398
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- NDL書誌ID
- 025460158
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
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- 抄録ライセンスフラグ
- 使用不可
