A Study of the Graphene Formation on Silicon Carbide-on-Insulator Substrates

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Other Title
  • SOI 基板を用いたグラフェン形成に関する研究
  • SOI キバン オ モチイタ グラフェン ケイセイ ニ カンスル ケンキュウ

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Abstract

  We investigated the effect of ion-beam irradiation on the growth of graphene at the 3C-SiC(111)/SiO2/Si(111) substrate by the surface decomposition method. When Ar+ ions with 1 keV were irradiated to the sample surface for 1 h and then annealed at 1200℃ for 1 min, graphene layers were formed. The graphene surfaces were evaluated by scanning tunneling microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. We found that the growth of graphene at the surface decomposition method is promoted by ion-beam irradiation. This result indicated that ion-beam irradiation caused breakage of Si-C bonds and induced desorption of Si atoms from the surface.<br>

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Details

  • CRID
    1390282680270350976
  • NII Article ID
    130004952515
  • NII Book ID
    AA12298652
  • DOI
    10.3131/jvsj2.57.144
  • ISSN
    18824749
    18822398
  • NDL BIB ID
    025460158
  • Text Lang
    ja
  • Data Source
    • JaLC
    • NDL
    • Crossref
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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