Analysis of Number of Layers in Epitaxial Few-Layer Graphene Grown on SiC towards Single-Crystal Graphene Substrate

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  • 単結晶グラフェン基板の創製に向けた　ＳｉＣ　上エピタキシャル少数層グラフェンの層数解析
  • タンケッショウ グラフェン キバン ノ ソウセイ ニ ムケタ SiC ジョウ エピタキシャル ショウスウソウ グラフェン ノ ソウスウ カイセキ

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  We review our research toward single-crystal growth of epitaxial few-layer graphene (FLG) on SiC substrates, in which surface electron microscopy techniques have played essential roles. We have established a method for evaluating the number of graphene layers microscopically using low-energy electron microscopy. The number-of-layers dependence of the work function and C1s binding energy is determined using photoelectron emission microscopy. We use LEEM and thermionic electron emission microscopy to investigate the growth processes of epitaxial FLG. Uniform bilayer graphene a few micrometers in size is obtained by annealing in UHV.<br>

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