High-concentration Rare Earth Ion Doping to Si Using Reconstructed Surface Structure
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- MIYATA Yusuke
- Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
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- OKUYAMA Yoshitaka
- Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
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- FUJIMURA Norifumi
- Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
Bibliographic Information
- Other Title
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- 表面再構成構造を利用したSiへの希土類元素の高濃度ドーピング
- ヒョウメン サイコウセイ コウゾウ オ リヨウ シタ Si エ ノ キドルイ ゲンソ ノ コウノウド ドーピング
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Journal
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- Journal of Smart Processing
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Journal of Smart Processing 2 (5), 219-223, 2013-09-20
Smart Processing Society for Materials, Environment & Energy (High Temperature Society of Japan)
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Details 詳細情報について
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- CRID
- 1390282680390748672
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- NII Article ID
- 10031200068
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- NII Book ID
- AA12553487
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- COI
- 1:CAS:528:DC%2BC3sXhvVaks73N
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- ISSN
- 21871337
- 2186702X
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- NDL BIB ID
- 024914701
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles