Thermal Relaxation of Residual Stresses in Multi Hard Films Deposited by Arc Ion Plating

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  • アーク・イオンプレーティングによって形成された硬質積層薄膜における残留応力の熱緩和
  • アーク イオン プレーティング ニ ヨッテ ケイセイサレタ コウシツ セキソウ ハクマク ニ オケル ザンリュウ オウリョク ノ ネツ カンワ

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The present study investigates crystal orientations and residual stresses in multi hard layer films deposited by arc ion plating. TiN and CrN films approximately 1.0μm thick in single layer were deposited on a stainless steel substrate. With a bias voltage of 0V, the TiN film exhibited strong {110} texture, whereas the dominant orientation of the film deposited at –100V was {111}. On the other hand, CrN films exhibited strong {110} texture with a bias voltage of –100V. The crystal structure of double-layer film had the same tendency as those for single-layer films. TiN films had very high compressive residual stresses : –8.6GPa in the {110} textured film and –10.0GPa in the {111} textured film. These residual stresses decreased with increasing annealing temperature and the reduction rate was greater for the {111} than for the {110} film. The behavior of residual stresses in the {111} and {110} textured layers of {111}/{110} textured double-layer film was identical to that for single-layer films. The CrN films had very high compressive residual stresses of –8.4GPa. These residual stresses decreased with increasing annealing temperature. However, Annealing of temperatures at 600°C showed change in peak intensities of CrN 220 diffraction.

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