GaAs<sub><font size="-1">1-<i>x</i></font></sub>Bi<sub><font size="-1"><i>x</i></font></sub>およびGaAs/GaAs<sub><font size="-1">1-<i>x</i></font></sub>Bi<sub><font size="-1"><i>x</i></font></sub>ヘテロ界面における局在準位

  • 冬木 琢真
    京都工芸繊維大学工芸科学部電子システム工学科
  • 伊藤 瑞記
    京都工芸繊維大学工芸科学部電子システム工学科
  • 角 浩輔
    京都工芸繊維大学工芸科学部電子システム工学科
  • 吉本 昌広
    京都工芸繊維大学工芸科学部電子システム工学科

書誌事項

タイトル別名
  • Localized States in GaAs<sub><font size="-1">1-<i>x</i></font></sub>Bi<sub><font size="-1"><i>x</i></font></sub> and GaAs/GaAs<sub><font size="-1">1-<i>x</i></font></sub>Bi<sub><font size="-1"><i>x</i></font></sub> Heterointerface
  • GaAs₁₋xBi[x]およびGaAs/GaAs₁₋xBi[x]ヘテロ界面における局在準位
  • GaAs ₁ ₋ xBi[x]オヨビ GaAs/GaAs ₁ ₋ xBi[x]ヘテロ カイメン ニ オケル キョクザイジュンイ
  • Localized States in GaAs1-xBix and GaAs/GaAs1-xBix Heterointerface

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抄録

The dilute bismuthide III-V semiconductor GaAs1-xBix alloys have unusual properties owing to large bowing of the band gap energy caused by Bi incorporation and a reduction of the temperature coefficients of the band gap. Deep- and shallow-level defects in device-quality GaAs1-xBix (χ ≤ 5.4%) are investigated. Deep- and shallow-level defects behave as non-radiative recombination centers and electrical carrier traps. The Bi-related localized states induced by the interaction between spatially localized Bi states and the valence band of GaAs are continuously located up to ∼90meV from the valence band with a density of ∼1 × 1017cm-3. In spite of concerns about the degradation of the hole mobility in GaAs1-xBix due to scattering at these Bi-related localized states near the valence band, the p-type doping masks the contribution of the Bi-related states to the hole mobility, and a high hole mobility of 200 cm2V-1s-1 is demonstrated. Despite low-temperature growth, the deep-level trap density in GaAs1-xBix is suppressed on the order of 1015cm-3 comparable to GaAs because of a surfactant-like effect of the Bi atoms. While the interface state density of ∼8 × 1011cm-2eV-1 in a GaAs/GaAs1-xBix heterointerface cannot be reduced by annealing, it can be reduced by half by the insertion of a Bi graded layer into the heterointerface.

収録刊行物

  • 材料

    材料 62 (11), 672-678, 2013

    公益社団法人 日本材料学会

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