Theoretical Study on Leakage Current in MOS with High-K Dielectric Stack: Effects of In-plane-Longitudinal Kinetic Energy Coupling and Anisotropic Masses
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- Khairurrijal
- Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung
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- Noor Fatimah A.
- Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung
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- Abdullah Mikrajuddin
- Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung
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- Sukirno
- Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung
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- Miyazaki Seiichi
- Graduate School of Advanced Sciences of Matter, Hiroshima University
書誌事項
- 公開日
- 2009
- DOI
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- 10.14723/tmrsj.34.291
- 公開者
- 一般社団法人 日本MRS
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説明
A model of leakage current in Al/HfO2/SiO2/Si MOS (metal-oxide-semiconductor) capacitors is given by adopting the tunnel current model in SiGe-based heterojunction bipolar transistors. The velocity of an electron in the metal gate, which originates from the coupling between longitudinal and transverse (in-plane) kinetic energies, and the anisotropic mass of the substrate were included in the leakage current model. It was found that the leakage current obtained by including the gate electron velocity is lower than that calculated without the coupling effect and the leakage current decreases with an increasing gate electron velocity. However, the leakage current is not significantly influenced by the silicon substrate orientation. If a measured leakage current in the high-K dielectric stack MOS with Si(100) substrate were much higher than that in the MOS with Si(111) as observed in the conventional MOS, then the gate electron phase velocity in the latter would be higher. A small increase of the equivalent oxide thickness (EOT) of HfO2 will decrease the tunnel current appreciably and tunnel current oscillations become visible as the EOT becomes thicker. Oscillatory behavior of the tunnel current is due to resonance states in the quantum well formed in high-K dielectric stack at high electric fields.
収録刊行物
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- Transactions of the Materials Research Society of Japan
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Transactions of the Materials Research Society of Japan 34 (2), 291-295, 2009
一般社団法人 日本MRS
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詳細情報 詳細情報について
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- CRID
- 1390282680489798272
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- NII論文ID
- 130005003979
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- COI
- 1:CAS:528:DC%2BD1MXhtVOms7jJ
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- ISSN
- 21881650
- 13823469
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
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- CiNii Articles
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可
