書誌事項
- タイトル別名
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- Measurements of emissivity behaviors of silicon semiconductor wafers
- Si ハンドウタイ ウエハ ノ ホウシャリツ キョドウ ノ ソクテイ
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Temperature measurement is important in many semiconductor processes such as Rapid Transient Annealing, Thermal Oxidation and Chemical Vapor Deposition. Spectral emissivities of silicon wafers vary widely, thus it is difficult to apply radiation thermometry to these processes. Goal of this research is to develop radiation thermometry that can compensate emissivity change. In order to achieve the purpose, emissivity behaviors of wafers were measured from the view points of spectral, directional and polarized characteristics. In this paper, newly developed experimental apparatuses are described in detail and some examples of emissivity measurements are introduced.
収録刊行物
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- 計測自動制御学会 部門大会/部門学術講演会資料
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計測自動制御学会 部門大会/部門学術講演会資料 sf19 (0), 67-67, 2002
公益社団法人 計測自動制御学会
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詳細情報 詳細情報について
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- CRID
- 1390282680536732672
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- NII論文ID
- 130006957918
- 40005810560
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- NII書誌ID
- AA11461587
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- ISSN
- 13437631
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- NDL書誌ID
- 6578993
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可