The Oxidation Characteristic in Numerically Controlled Atmospheric-Pressure Plasma Sacrificial Oxidation

DOI

Bibliographic Information

Other Title
  • 数値制御大気圧プラズマ犠牲酸化法における酸化特性

Description

Modern surface processing of semiconductors or oxide materials requires highly precise temporal control of each processing step. In addition, large wafers must be processed quickly for high throughput. We have developed numerically controlled sacrificial oxidation with atmospheric-pressure plasma using electrode arrays. In this method, we oxidized the surface of a wafer with atmospheric-pressure plasma applied precisely by an electrode array, and then dipped the wafer in 0.5% HF solution for 1 min to remove the surface oxide layer. The plasma process time at each electrode area can be controlled independently. The oxidation rate and the surface profile of treated wafer are important factors in the precision process. We investigated the oxidation rate of atmospheric pressure plasma oxidation by spectroscopic ellipsometry and the surface morphologies of untreated and treated wafers by atomic force microscopy (AFM). Moreover, we report the relationship between oxide film thickness and amount of processing. We also report on the properties of oxide films formed by atmospheric-pressure plasma.

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Details 詳細情報について

  • CRID
    1390282680634905984
  • NII Article ID
    130005486949
  • DOI
    10.11522/pscjspe.2015a.0_717
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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