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Depth profiling of multilayered Si/Ti by resonant multi-photon ionization SNMS
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- Nishinomiya Suguru
- Advanced Technology Research Laboratories, Nippon Steel Corporation
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- Kubota Naoyoshi
- Advanced Technology Research Laboratories, Nippon Steel Corporation
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- Hayashi Syun-ichi
- Advanced Technology Research Laboratories, Nippon Steel Corporation
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- Takenaka Hisataka
- NTT Advanced Technology Corporation
Bibliographic Information
- Other Title
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- 共鳴多光子イオン化スパッタ中性粒子質量分析法によるSi/Ti多層膜の深さ方向分析
Description
従来の二次イオン質量分析法（SIMS）では，マトリックス効果により，深さ方向分析の定量測定に難があった．これまで我々のグループは，共鳴多光子イオン化によるスパッタ中性粒子分析法（SNMS）を用いてマトリックス効果の小さい定量測定手法の開発を行ってきた．今回，SNMSを用いてSi/Ti多層膜の深さ方向分析を行った．その結果より，SNMSの定量性をSIMSと比較し，議論する．
Journal
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- Abstract of annual meeting of the Surface Science of Japan
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Abstract of annual meeting of the Surface Science of Japan 29 (0), 49-49, 2009
The Japan Society of Vacuum and Surface Science
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Details 詳細情報について
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- CRID
- 1390282680656777344
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- NII Article ID
- 130004674253
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles
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- Abstract License Flag
- Disallowed
