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Formation of FeS<sub>2</sub> Quantum Dot Semiconductor Using Electro Spray Method
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- ISHIKAWA Yasuaki
- Nara Institute of Science and Technology
Bibliographic Information
- Other Title
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- 静電噴霧法によるFeS<sub>2</sub>量子ドット半導体の創製
Description
<p>Iron Pyrite (FeS2), which has received much attention as an earth abundant semiconductor material, has relatively low bandgap of 0.95 eV. Downsizing to present quantum confinement effect enables us to increase the bandgap. This report proposed the electro-spray deposition (ESD) method to downsize the nanoparticle (NP) of FeS2. It is found that the fabricated FeS2 contained Marcasite which is impurity phase of FeS2. The TEM observation revealed the NPs of 5-nm diameter were produced by the ESD method. We suggested that the NPs were produced via Rayleigh fission since the distribution of NP’s diameter were scattered, resulting in poor fitting with logarithmic normal distribution. </p>
Journal
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- Hosokawa Powder Technology Foundation ANNUAL REPORT
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Hosokawa Powder Technology Foundation ANNUAL REPORT 22 (0), 16-23, 2014
Hosokawa Powder Technology Foundation
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Details 詳細情報について
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- CRID
- 1390282680779857792
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- NII Article ID
- 130005710211
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- ISSN
- 21894663
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
- OpenAIRE
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- Abstract License Flag
- Allowed