J012015 Electrical properties of individual aluminum nanowire generated by stress-induced method

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  • J012015 ストレスマイグレーションによるアルミナノワイヤの作製及び電気特性の評価に関する研究([J012-01]電子情報機器、電子デバイスの強度・信頼性評価と熱制御(1))

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In recent years, the size of electrical devices has evolved into the micrometer-scale and their circuit electrical wirings are also becoming smaller. The sizes of the wirings are on the nanometer order. The electrical resistivity becomes larger and the failure current density become smaller because of the size effect on grain boundary scattering. So in this study, we proposed the application of single crystalline aluminum nanowire as electrical wiring in the circuit. High quality Al nanowires were fabricated by simply heating the Al film. The driving force is determined by the compressive stresses caused by the thermal expansion mismatch between the Al film and Si substrate. The range of heating temperatures was between 473 and 583 K and the heating time was approximately 3 h. After heating, we observed numerous Al nanowires on the film surface by using the scanning electron microscope. We determined the relationship between heating temperature and Al nanowires growth. By using TEM, we confirmed that the Al nanowires were single crystalline. In order to understand the performance of individual Al nanowires, their electrical properties were also studied in detail.

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