S1660102 Removal rate improvement in wide-gap semiconductor material substrates CMP using silica slurry with H_2O_2

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  • S1660102 H_2O_2を用いたシリカスラリーによる高効率ワイドギャップ半導体材料基板の研磨([S166]窒化物半導体デバイスの精密加工プロセス)

Abstract

Wide gap semiconductor SiC is known as a material for next generation power device. However, processing of SiC substrate is very difficult, because of the high hardness and stable chemical properties of SiC. Especially in Chemical Mechanical Polishing (CMP) process, extraordinary time is required, which makes product cost of SiC substrate high. In this study, fundamental study of silica abrasive effect to SiC CMP performance was conducted in order to develop a high efficiency CMP slurry for SiC. As a results, we found that SiC removal rate is proportional to square of abrasive diameter and the number of abrasives. Furthermore, SiC removal rate was improved with KNO_3 addition in slurry and confetti shape abrasives.

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