Electromigration of Si Adatoms on Si Surfaces : A key to understanding the step bunching instabilities during sublimation, equilibrium and MBE growth(<Special Issue>Recent Trend of Crystal Growth Theory)
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- Stoyanov S.
- Institute of Physical Chemistry, Bulgarian Academy of Sciences
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- Metois J. J.
- CRMC2-CNRS, Campus de Luminy
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- Tonchev V.
- Institute of Physical Chemistry, Bulgarian Academy of Sciences
Bibliographic Information
- Other Title
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- 解説 Electromigration of Si Adatoms on Si Surface--A key to understanding the step bunching instabilities during sublimation, equilibrium and MBE growth
- カイセツ Electromigration of Si Adatoms on Si Surface A key to understanding the step bunching instabilities during sublimation equilibrium and MBE growth
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Journal
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- Journal of the Japanese Association for Crystal Growth
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Journal of the Japanese Association for Crystal Growth 29 (1), 17-19, 2002
The Japanese Association for Crystal Growth
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Details 詳細情報について
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- CRID
- 1390282680873431168
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- NII Article ID
- 110002715516
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- NII Book ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL BIB ID
- 6135086
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- CiNii Articles
