Advancement of Numerical Investigation of a Silicon Czochralski Growth with Application of a Transverse Magnetic Field(<Special Issue>Single and Multi Crystalline Silicon)

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  • Liu Lijun
    Research Institute for Applied Mechanics, Kyushu University
  • Nakano Satoshi
    Research Institute for Applied Mechanics, Kyushu University
  • Kakimoto Koichi
    Research Institute for Applied Mechanics, Kyushu University

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  • 横磁場印加シリコンCZ炉内の熱流体解析(<小特集>Si系単結晶・多結晶)
  • Advancement of Numerical Investigation of a Silicon Czochralski Growth with Application of a Transverse Magnetic Field

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A three-dimensional (3D) global model was recently developed for simulation of heat transfer in a Czochralski (CZ) furnace for silicon crystal growth. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite control-volume method. The model was demonstrated to be valid and reasonable, and it enables 3D global simulations are conducted with moderate requirements of computer memory and computation time. Some results obtained recently using this 3D global model were reported for a small silicon CZ growth in a transverse magnetic field (TMCZ). The results of heat and oxygen transfers in the melt of an electromagnetic CZ configuration (EMCZ) were also introduced. The model showed powerful capability in analyzing heat, mass and oxygen transfers in a CZ configuration.

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