Growth of Bulk GaN Single Crystals by the Solution Growth Method under High-Pressure(<Special Issue>Science and Technology in Crystal Growth)
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- Kainosho Keiji
- Japan Energy Corporation
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- Inoue Takayuki
- Japan Energy Corporation
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- Yokohata Akihito
- Japan Energy Corporation
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- Kurai Satoshi
- Faculty of Engineering, Yamaguchi University
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- Yamada Yoichi
- Faculty of Engineering, Yamaguchi University
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- Taguchi Tsunemasa
- Faculty of Engineering, Yamaguchi University
Bibliographic Information
- Other Title
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- 高圧溶液成長法によるバルクGaN単結晶の成長(<小特集>バルク成長分科会特集 : 結晶成長の科学と技術)
- 高圧溶液成長法によるバルクGaN単結晶の成長
- コウアツ ヨウエキ セイチョウホウ ニ ヨル バルク GaN タンケッショウ ノ セイチョウ
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Abstract
The growth of bulk GaN single crystals by the high-pressure solution growth method under "the Light for the 21st Century" Japanese national project has been carried out using a high-pressure furnace. It was found that the rate of increase of N_2 pressure affected the size of a GaN single crystal. GaN single crystals with an area of about 120 mm^2 were obtained at a rate less than 49 MPa/h. The maximum size of single crystals grown at 1475℃ under a N_2 pressure of 1000 MPa was over 20 mm in diameter. The FWHM of rocking curve measured for (0002) X-ray diffraction peak was 60-120 arcsec and (101^^-1) X-ray diffraction peak was 30-60 arcsec. The dislocation density less than 10^5 cm^<-2> was obtained by TEM image and CL image observations.
Journal
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- Journal of the Japanese Association for Crystal Growth
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Journal of the Japanese Association for Crystal Growth 29 (5), 439-444, 2002
The Japanese Association for Crystal Growth
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Details 詳細情報について
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- CRID
- 1390282680874282240
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- NII Article ID
- 110002715710
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- NII Book ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL BIB ID
- 6433484
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed