Characterization of Group III Nitride Buffer Layers Grown at Room Temperature(<Special Issue>Novel Approach to Epitaxial Growth with Buffer Layers)

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  • Ohta Jitsuo
    Institute of Industrial Science, The University of Tokyo:Kanagawa Academy of Science and Technology
  • Kobayashi Atsushi
    Institute of Industrial Science, The University of Tokyo
  • Oshima Masaharu
    School of Engineering, The University of Tokyo
  • Fujioka Hiroshi
    Institute of Industrial Science, The University of Tokyo:Kanagawa Academy of Science and Technology

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Other Title
  • III族窒化物室温成長バッファー層の評価(<小特集>Buffer層を中心としたエピタキシーの新展開)
  • 3族窒化物室温成長バッファー層の評価
  • 3ゾク チッカブツ シツオン セイチョウ バッファーソウ ノ ヒョウカ

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Abstract

We have investigated characteristics of GaN and AlN grown on nearly lattice-matched substrates such as (Mn, Zn) Fe_2O_4 and ZnO by the use of pulsed laser deposition (PLD) at low substrate temperatures. It has been found that the interfacial reactions between the nitride films and the substrates are suppressed with the reduction of the growth temperature and high quality AlN and GaN grow epitaxially at room temperature on the chemically vulnerable substrates. RHEED observations have revealed that these films grow with the layer-by-layer mode and the atomically flat surfaces with stepped and terraced structures are obtained. These results indicate that the room temperature grown GaN and AlN are promising candidates for the buffer layers of group III nitrides.

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