Growth of Large GaN Single Crystals with Low Dislocation Density Using the Liquid Phase Epitaxy Technique(<Special Issue>Bulk Crystals for Substrates)

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  • LPE成長法による大型・低転位GaN単結晶の育成(<小特集>基板結晶)
  • LPE成長法による大型・低転位GaN単結晶の育成
  • LPE セイチョウホウ ニ ヨル オオガタ テイテンイ GaNタンケッショウ ノ イクセイ

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Abstract

The growth of large size GaN single crystals with low dislocation density was succeeded by applying the Liquid Phase Epitaxy (LPE) technique and some improvements for the Na flux methods. We examined the conditions at which GaN are grown in the Na flux and found that Na promotes the solubility of nitrogen against the Ga-Na melt due to strong power to reduce the nitrogen states. We review our attempts for the growth of large GaN single crystals and understanding growth mechanism in the alkali-based flux system.

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