書誌事項
- タイトル別名
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- Growth of Large GaN Single Crystals with Low Dislocation Density Using the Liquid Phase Epitaxy Technique(<Special Issue>Bulk Crystals for Substrates)
- LPE成長法による大型・低転位GaN単結晶の育成
- LPE セイチョウホウ ニ ヨル オオガタ テイテンイ GaNタンケッショウ ノ イクセイ
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The growth of large size GaN single crystals with low dislocation density was succeeded by applying the Liquid Phase Epitaxy (LPE) technique and some improvements for the Na flux methods. We examined the conditions at which GaN are grown in the Na flux and found that Na promotes the solubility of nitrogen against the Ga-Na melt due to strong power to reduce the nitrogen states. We review our attempts for the growth of large GaN single crystals and understanding growth mechanism in the alkali-based flux system.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 32 (1), 3-9, 2005
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680874995840
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- NII論文ID
- 110007327670
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 7311819
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可