Highly Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength.

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  • Naito Takuya
    Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210
  • Asakawa Koji
    Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210
  • Shida Naomi
    Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210
  • Ushirogouchi Tohru
    Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210
  • Nakase Makoto
    Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210

抄録

Naphthalene-containing chemically amplified resists for ArF excimer laser exposure are proposed, based on the concept of the absorption band shift by conjugation extension. Newly developed ArF excimer resists show a high transparency at 193 nm wavelength, a high sensitivity and a high contrast. The sensitivity of the resist is 150 mJ/cm2, which is 20 times greater than that of poly(methylmethacrylate) (PMMA). Furthermore, a 0.16 µ m pattern could be successfully fabricated by an ArF excimer laser stepper with 0.55 numerical aperture (NA) projection lens.

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