Synthesis of AlN Thin Films on Sapphire Substrates by Chemical Vapor Deposition of AlCl<sub>3</sub>–NH<sub>3</sub> System and Surface Acoustic Wave Properties
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- Kaya Kiyoshi
- Electronics Materials and Devices Laboratory, Asahi Chemical Industry Cooperation, Ltd., 2–1 Samejima, Fuji, Shizuoka 416, Japan
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- Kanno Yasuhito
- Electronics Materials and Devices Laboratory, Asahi Chemical Industry Cooperation, Ltd., 2–1 Samejima, Fuji, Shizuoka 416, Japan
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- Takahashi Hiroshi
- Electronics Materials and Devices Laboratory, Asahi Chemical Industry Cooperation, Ltd., 2–1 Samejima, Fuji, Shizuoka 416, Japan
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- Shibata Yoshihiko
- Electronics Materials and Devices Laboratory, Asahi Chemical Industry Cooperation, Ltd., 2–1 Samejima, Fuji, Shizuoka 416, Japan
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- Hirai Toshio
- Institute for Materials Research, Tohoku University, 2–1–1 Katahira, Aoba, Sendai 980–77, Japan
書誌事項
- タイトル別名
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- Synthesis of AlN Thin Films on Sapphire Substrates by Chemical Vapor Deposition of AlCl3-NH3 System and Surface Acoustic Wave Properties.
- Synthesis of AlN Thin Films on Sapphire
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抄録
Thin films of AlN were prepared on (012) sapphire substrates by chemical vapor deposition using AlCl3, NH3, H2 and N2 gases. Crystal orientations, surface microstructures, oxygen impurity contents of the films and surface acoustic wave (SAW) properties determined using an interdigital transducer were investigated. Under optimized conditions, epitaxial AlN films were deposited and crystal orientation of AlN films increased as the thickness of the films increased. Oxygen impurity contents were less than 1 atm%. The dependence of SAW velocity along the [001] AlN axis on the film thickness was in good agreement with the theoretical prediction and the temperature coefficients of the center frequency increased as the film thickness increased. These tendencies are considered to be explained by the high crystal orientation and low oxygen impurity content of AlN epitaxial films.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (5A), 2782-2787, 1996
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681222940672
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- NII論文ID
- 110003905225
- 210000039247
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4059668
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可