Atomic-Layer Chemical-Vapor-Deposition of SiO2 by Cyclic Exposures of CH3OSi(NCO)3 and H2O2.

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  • Morishita Shunsuke
    Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan
  • Uchida Yasutaka
    Department of Electronics and Information Science, Nishi Tokyo University, Uenohara–machi, Yamanashi 409–01, Japan
  • Matsumura Masakiyo
    Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan

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  • Atomic-Layer Chemical-Vapor-Deposition of SiO<sub> 2</sub> by Cyclic Exposures of CH<sub> 3</sub>OSi(NCO)<sub> 3</sub> and H<sub> 2</sub>O<sub> 2</sub>

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Atomic-layer chemical-vapor-deposition (AL-CVD) of SiO2 has been achieved by cyclic exposures of CH3OSi(NCO)3 and H2O2 at room temperature. The deposition rate was saturated at about 2.0 Å/cycle i.e., equal to the ideal quasi-monolayer/cycle. The surface roughness after 100 deposition cycles was found to be less than ±10 Å by atomic force microscopy (AFM). Film properties were also evaluated by auger electron spectroscopy (AES), X-ray photoemission spectroscopy (XPS), and Fourier transform IR (FT-IR) spectroscopy.

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